Utilizing ambipolar tunnel emission of ballistic electrons and holes, we have developed a model-independent method to self-consistently measure bandgaps of semiconductors and band offsets at semiconductor heterojunctions. Lattice-matched GaAs/AlxGa1-xAs and GaAs/(AlxGa1-x)0.51In0.49P (100) single-barrier heterostructures are studied at 4.2 K. For the GaAs/AlGaAs interface, the measured G band offset ratio is 60.4:39.6 (+/-2%). For the heteroanion GaAs/AlGaInP (100) interface, this ratio varies with the Al composition and is distributed more in the valence band. The indirect-gap X band offsets observed at the GaAs/AlGaInP interface deviates from predictions by the transitivity rule.


Yi, Wei, Venkatesh Narayanamurti, Hong Lu, Michael A. Scarpulla, Arthur C. Gossard, Yong Huang, Jae-Hyun Ryou, and Russell D. Dupuis. "Bandgap and Band Offsets Determination of Semiconductor Heterostructures Using Three-Terminal Ballistic Carrier Spectroscopy." Applied Physics Letters 95.11 (September 14, 2009): p112102-112105.